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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク SILC (semiconductors) ： ウィキペディア英語版 SILC (semiconductors) Stress Induced Leakage Current (SILC) is an increase in the gate leakage current of a MOSFET, due to defects created in the gate oxide during electrical stressing. SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices. ==Oxide defects== The most well-studied defects assisting in the leakage current are those produced by charge trapping in the oxide. This model provides a point of attack and has stimulated researchers to develop methods to decrease the rate of charge trapping by mechanisms such as nitrous oxide (N2O) nitridation of the oxide. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「SILC (semiconductors)」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.